s mhop microelectronics c orp. a stu/d456a symbol v ds v gs i dm a i d units parameter 40 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 40v 30a 36 @ vgs=4.5v 23 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a www.samhop.com.tw nov,17,2014 1 details are subject to change without notice. t c =25 c g g s s w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 30 30 88 42 green product 24 27 ver 1.1 std series to-251s(i-pak) g g s s d d stu series to-252aa(d-pak)
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) v 18.5 g fs s c iss 540 pf c oss 87 pf c rss 70 pf q g 12 nc 12.5 18.5 17 t d(on) 11.5 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =15a v ds =10v , i d =15a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =12a 23 26.5 36 m ohm c f=1.0mhz c stu/d456a www.samhop.com.tw nov,17,2014 2 v sd nc q gs nc q gd 1.5 3.8 gate-drain charge gate-source charge diode forward voltage v ds =20v,i d =15a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a 0.785 1.3 v notes nc 6 v ds =20v,i d =15a,v gs =10v v ds =20v,i d =15a,v gs =4.5v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ 1 1.9 3 32 ver 1.1
stu/d456a ver 1.1 www.samhop.com.tw nov,17,2014 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 30 24 18 12 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =3.5v v gs =10v v gs =3v v gs =4v v gs =4.5v 30 24 18 12 6 0 0 0.8 4.8 4.0 3.2 2.4 1.6 25 c tj=125 c -55 c 60 50 40 30 20 10 1 1 6121824 30 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =4.5v i d =12a v gs =10v i d =15a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua
stu/d456a ver 1.1 www.samhop.com.tw nov,17,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 40 100 10 1 0.3 v gs =10v single pulse t a =25 c 90 75 60 45 30 15 0 24 68 10 0 i d =15a 25 c 75 c 125 c 10 1 60 0 0.3 0.6 0.9 1.2 1.5 25 c 125 c ciss coss crss 600 500 400 300 200 100 0 10 15 20 25 30 0 5 10 8 6 4 2 0 024 6 81012 14 16 v ds =20v i d =15a 110 100 1 10 100 300 vds=20v,id=1a vgs=10v tr td(off ) tf td(on) dc 10ms 1ms 10 0u s 75 c r d s ( on) lim i t
t p v (br )dss i as figure 13b. stu/d456a ver 1.1 www.samhop.com.tw nov,17,2014 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - v dd a 20v
stu/d456a ver 1.1 www.samhop.com.tw nov,17,2014 6 package outline dimensions to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380
stu/d456a ver 1.1 www.samhop.com.tw nov,17,2014 7 to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d 6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318
stu/d456a ver 1.1 www.samhop.com.tw nov,17,2014 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu456a smc internal code no. (a,b,c...z) ver 1.1 sdu/d456a nov,17,2014
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) std456a smc internal code no. (a,b,c...z) ver 1.1 nov,17,2014 stu/d456a
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